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| PHOTODIODE InGaAs PIN photodiode G8198 series High-speed response at low reverse voltage Features Applications l High-speed response at low reverse voltage G8198-01: 3 GHz (VR=2 V) G8198-02: 2 GHz (VR=2 V) l Low noise, low dark current l Low terminal capacitance l Small package l Optical fiber communications l Fiber channel l Gigabit Ethernet s Absolute maximum ratings (Ta=25 C) Parameter Reverse voltage Operating temperature Storage temperature Symbol V4 Max. Topr Tstg Value 20 -40 to +85 -55 to +125 Unit V C C s Specifications (Ta=25 C) Parameter Active area Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Cut-off frequency Terminal capacitance Symbol l lp S I, fc Ct l=1.3 m l=1.55 m V4=5 V VR=2 V, RL=50 9 l=1.3 m V4=2 V f=1 MHz Condition Min. 0.8 0.85 - G8198-01 Typ. f0.04 0.9 to 1.7 1.55 0.9 0.95 0.06 3 0.6 Max. 0.3 - Min. 0.8 0.85 - G8198-02 Typ. f0.08 0.9 to 1.7 1.55 0.9 0.95 0.08 2 0.9 Max. 0.4 - Unit mm m m A/W nA GHz pF 1 InGaAs PIN photodiode s Spectral response 1.2 (Typ. Ta=25 C) G8198 series (Typ. Ta=25 C) s Dark current vs. reverse voltage 1 nA PHOTO SENSITIVITY (A/W) 1.0 G8198-02 0.8 DARK CURRENT 100 pA 0.6 G8198-01 10 pA 0.4 0.2 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 pA 0.01 0.1 1 10 100 WAVELENGTH (m) KIRDB0160EA REVERSE VOLTAGE (V) KIRDB0161EA s Terminal capacitance vs. reverse voltage 10 pF (Typ. Ta=25 C) s Frequency response 10 (Typ. Ta=25 C, =1.3 m, RL=50 , VR=2 V) 5 TERMINAL CAPACITANCE RELATIVE OUTPUT (dB) G8198-01 0 G8198-02 1 pF -5 G8198-02 -10 G8198-01 -15 100 fF 0.01 0.1 1 10 100 -20 10 MHz 100 MHz 1 GHz 10 GHz REVERSE VOLTAGE (V) FREQUENCY KIRDB0162EA s Dimensional outline (unit: mm) 4.2 0.1 3.5 0.1 0.7 0.2 1.6 0.15 WINDOW 1 MIN. ANTI-REFLECTION COATING WINDOW l=1.55 m s Eye diagram (photodiode output) 2.48832 Gbps Pin= -3 dBm VR=2.0 V 100 ps/div. KIRDB0163EA PHOTOSENSITIVE SURFACE 0.3 LEAD 1.65 CASE 0.38 MAX. 7.62 MAX. KIRDA0097EA 2.7 0.2 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KIRD1028E02 Jan. 2001 DN |
Price & Availability of G8198-01
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